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The next time I can talk is tomorrow at 1:30. Could you give me a call
———————- Forwarded by Melissa Ann Murphy/HOU/ECT on 11/21/2000
11:19 AM —————————
Melissa Ann Murphy
11/16/2000 10:31 AM
To: Leslie Smith/HOU/ECT@ECT, Mark Frank/HOU/ECT@ECT, Steve
Subject: I’m Baaaaaaack…
Hi! I’m back from California and ready to start trading. Thanks for all
your help!The present invention relates to a semiconductor device and a method of manufacturing the same and, more particularly, to a method of manufacturing a semiconductor device in which an insulating film is formed on a semiconductor substrate, a metal film is formed on the insulating film, and a metal film layer is further formed on the metal film, in which a metal film layer having a step that reaches a step part on a semiconductor substrate and is not etched in the step part is formed.
A surface flatness of a substrate is considered to be important for forming a fine metal wiring, and a substrate whose surface is flat is required to be used in order to obtain the substrate. As a method for forming a flat substrate surface, there has been widely used a CMP method in which a substrate is polished while a polished surface is used as a stopper. Recently, in order to reduce the size of elements and to increase the degree of integration, a semiconductor device has been increasingly used in which a device formation region is made smaller than that of a conventional semiconductor device. As a result, the size of a CMP step part tends to be reduced.
In a semiconductor device to be formed after a metal wiring is formed, for example, a gate electrode wiring, a bit line, and the like, a CMP step is performed to form a high-concentration source region and a low-concentration source region of a source electrode or to form a gate electrode contact pad, 70238732e0
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